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  september 2010 doc id 6744 rev 8 1/21 21 tda7293 120-volt, 100-watt, dmos audio amplifier with mute and standby features ? multipower bcd technology ? very high operating voltage range (50 v) ? dmos power stage ? high output power (100 w into 8 ? @ thd =10%, with v s = 40 v) ? muting and stand-by functions ? no switch on/off noise ? very low distortion ? very low noise ? short-circuit protected (with no input signal applied) ? thermal shutdown ? clip detector ? modularity (several devices can easily be connected in parallel to drive very low impedances) description the tda7293 is a monolithic integrated circuit in multiwatt15 package, intended for use as audio class ab amplifier in hi-fi field applications, such as home stereo, self powered loudspeakers and topclass tv. thanks to the wide voltage range and to the high ou tput current capab ility it is able to supply the highest power into both 4- ? and 8- ? loads. the built-in muting function with turn-on delay simplifies the remote operation avoiding on-off switching noises. parallel mode is possible by connecting several devices and using pin11. high output power can be delivered to very low impedance loads, so optimizing the thermal dissipation of the system figure 1. tda7293 block diagram table 1. device summary order code package tda7293v multiwatt15v tda7293hs multiwatt15h multiwatt15v multiwatt15h in- 2 r2 680 ? c2 22 f c1 470nf in+ r1 22k 3 r3 22k - + mute stby 4 vmute vstby 10 9 sgnd mute stby r4 22k thermal shutdown s/c protection r5 10k c3 10 f c4 10 f 1 stby-gnd c5 22 f 713 14 6 15 8 -vs -pwvs bootstrap out +pwvs +vs c9 100nf c8 1000 f -vs d97au805a +vs c7 100nf c6 1000 f buffer driver 11 boot loader 12 5 vclip clip det (*) (*) see application note ( ** ) for slave function (**) www.st.com
contents tda7293 2/21 doc id 6744 rev 8 contents 1 pin connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.1 output stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3.2 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3.3 other features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 applications information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 applications suggestions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.2 high efficiency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.3 bridge application . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.4 modular application (ref. figure 12) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.5 bootstrap capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.1 vertically-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2 horizontally-mounted package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
tda7293 pin connections doc id 6744 rev 8 3/21 1 pin connections figure 2. pin connections 1 2 3 4 5 6 7 9 10 11 8 buffer driver mute stand-by -v s (signal) +v s (signal) bootstrap clip and short circuit detector signal ground non inverting input inverting input stand-by gnd tab connected to pin 8 13 14 15 12 -v s (power) out +v s (power) bootstrap loader d97au806
electrical specifications tda7293 4/21 doc id 6744 rev 8 2 electrical specifications 2.1 absolute maximum ratings 2.2 thermal data table 2. absolute maximum ratings symbol parameter value unit v s supply voltage (no signal) 60 v v 1 v standby gnd voltage referred to -v s (pin 8) 90 v v 2 input voltage (inverting) referred to -v s 90 v v 2 - v 3 maximum differential inputs 30 v v 3 input voltage (non inverting) referred to -v s 90 v v 4 signal gnd voltage referred to -v s 90 v v 5 clip detector voltage referred to -v s 120 v v 6 bootstrap voltage referred to -v s 120 v v 9 standby voltage referred to -v s 120 v v 10 mute voltage referred to -v s 120 v v 11 buffer voltage referred to -v s 120 v v 12 bootstrap loader voltage referred to -v s 100 v i o output peak current 10 a p tot power dissipation t case = 70c 50 w t op operating ambient temperature range 0 to 70 c t stg , t j storage and junction temperature 150 c v s supply voltage (no signal) 60 v v 1 v standby gnd voltage referred to -v s (pin 8) 90 v v esd_hbm esd maximum withstanding voltage range, test condition cdf-aec-q 100-002- ?human body model? 1500 v table 3. thermal data symbol parameter min typ max unit r thj-case thermal resistance junction to case - 1 1.5 c/w
tda7293 electrical specifications doc id 6744 rev 8 5/21 2.3 electrical characteristics the specifications given here were obtained with the conditions v s = 40 v, r l = 8 ? , r g =50 ? , t amb = 25 c, f = 1 khz unless otherwise specified. . table 4. electrical characteristics symbol parameter test co nditions min typ max unit v s supply range - 12 - 50 v i q quiescent current - - 50 100 ma i b input bias current - - 0.3 1 a v os input offset voltage - -10 - 10 mv i os input offset current - - - 0.2 a p o continuous output power d = 1%, r l = 4 ? , v s = 29 v 75 80 80 -w d = 10%, r l = 4 ?, v s = 29 v 90 100 100 -w d total harmonic distortion (1) p o = 5 w, f = 1 khz - 0.005 - % p o = 0.1 to 50 w, f = 20 hz to 15 khz --0.1% i sc current limiter threshold v s 40 v - 6.5 - a sr slew rate - 5 10 - v/ s g v open loop voltage gain - - 80 - db g v closed loop voltage gain (2) - 293031db e n total input noise a = curve - 1 - v f = 20 hz to 20 khz - 3 10 v r i input resistance - 100 - - k ? svr supply voltage rejection f = 100 hz, v ripple = 0.5 v rms -75-db t s thermal protection device mutes - 150 - c device shuts down - 160 - c standby function (ref. to to pin 1) v st on standby on threshold - - - 1.5 v v st off standby off threshold - 3.5 - - v at t st-by standby attenuation - 70 90 - db i q st-by quiescent current @ standby - - 0.5 1 ma mute function (ref. to pin 1) v mon mute on threshold - - - 1.5 v v moff mute off threshold - 3.5 - - v at t mute mute attenuation - 60 80 - db
electrical specifications tda7293 6/21 doc id 6744 rev 8 note: pin 11 only for modular connection. max external load 1 m ? / 10 pf, only for test purposes figure 3. typical application pcb and component layout clip detector duty duty cycle ( pin 5) d = 1%, r pullup = 10 k ? to 5 v -10-% d = 10%, r pullup = 10 k ? to 5 v 30 40 50 % i cleak -p o = 50 w - - 3 a slave function pin 4 (ref. to pin 8) v slave slavethreshold - - - 1 v v master master threshold - 3 - - v 1. tested with optimized applications board (see fig. 3) 2. g vmin 26db table 4. electrical characteristics (continued) symbol parameter test co nditions min typ max unit
tda7293 circuit description doc id 6744 rev 8 7/21 3 circuit description in consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost, the performance obtained from the best discrete designs. the task of realizing this linear integrated circuit in conventio nal bipolar technology is made extremely difficult by the occurence of 2nd breakdown phoenomenon. it limits the safe operating area (soa) of the power devices, and, as a consequence, the maximum attainable output power, especially in presence of highly reactive loads. moreover, full exploitation of the soa translates into a substantial increase in circuit and layout complexity due to the need of sophisticated protection circuits. to overcome these substantial drawbacks, the use of power mos devices, which are immune from secondary breakdown is highly desirable. the device described has therefore been developed in a mixed bipolar-mos high voltage technology called bcdii 100/120. 3.1 output stage the main design task in developping a power operational amplifier, independently of the technology used, is that of realization of the output stage. the solution shown as a principle shematic by fi g6 represents the dmos unity - gain output buffer of the tda7293. figure 4. schematic of a dmos unity-gain buffer this large-signal, high-power buffer must be capable of handling extremely high current and voltage levels while maintaining acceptably low harmonic distortion and good behaviour over frequency response; moreover, an accurate control of quiescent current is required. a local linearizing feedback, provided by differen tial amplifier a, is us ed to fullfil the above requirements, allowing a simple and effective quiescent current setting. proper biasing of the power output transistors alone is however not enough to guarantee the absence of crossover distortion.
circuit description tda7293 8/21 doc id 6744 rev 8 while a linearization of the dc transfer characteristic of the stage is obtained, the dynamic behaviour of the system must be taken into account. a significant aid in keeping the distortion contri buted by the final stage as low as possible is provided by the compensation scheme, which ex ploits the direct connection of the miller capacitor at the amplifier?s output to introduce a local ac feedback path enclosing the output stage itself. 3.2 protection in designing a power ic, particular attention must be reserved to the circuits devoted to protection of the device from short circuit or overload conditions. due to the absence of the 2nd breakdown phenomenon, the soa of the power dmos transistors is delimited only by a maximum dissipation curve dependent on the duration of the applied stimulus. in order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this device combines a conventional soa protection circuit with a novel local temperature sensing technique which " dynamically" controls the maximum dissipation. in addition to the overload protection described above, the device features a thermal shutdown circuit which initially puts the device into a muting state (@ t ? = 150 c) and then into stand-by (@ t j = 160 c). full protection against electrostatic discharges on very pin is included. 3.3 other features the device is provided with both standby and mute functions, independently driven by two cmos logic compatible input pins. the circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid any kind of uncontrolled audible transient at the output. the sequence that we recommend during the on/off transients is shown in figure 8. the application of figure 9 shows the possibility of sing only one command for both st-by and mute functions. on both the pins, the maximum applicable range corresponds to the operating supply voltage.
tda7293 circuit description doc id 6744 rev 8 9/21 figure 5. suggested turn-on/off sequence figure 6. single signal sta ndby/mute control circuit play off st-by mute mute st-by off d98au817 5v 5v +vs (v) +40 -40 v mute pin #10 (v) v st-by pin #9 (v) -vs v in (mv) i q (ma) v out (v) 1n4148 10k 30k 20k 10 f 10 f mute stby d93au014 mute/ st-by
applications information tda7293 10/21 doc id 6744 rev 8 4 applications information 4.1 applications suggestions the recommended values of the external components are those shown on the application circuit of figure 1 on page 1 . different values can, however, be used and the following table could be useful when choosing alternative values. figure 7. slave function: pin 4 (ref to pin 8) table 5. choosing alternative component values component suggested value purpose larger than suggested smaller than suggested r1 (1) 1. r1 = r3 for pop optimization 22 k ? input resistance increase input impedance decrease input impedance r2 680 ? closed loop gain, set to 30 db (2) 2. closed loop gain has to be 3 26db decrease of gain increase of gain r3 (1) 22 k ? increase of gain decrease of gain r4 22 k ? standby time constant larger standby on/off time smaller standby on/off time; pop noise r5 10 k ? mute time constant larger mute on/off time smaller mute on/off time c1 0.47 f input dc decoupling - higher low-frequency cutoff c2 22 f feedback dc decoupling - higher low-frequency cutoff c3 10 f mute time constant larger mute on/off time smaller mute on/off time c4 10 f standby time constant larger standby on/off time smaller standby on/off time; pop noise c5 22 f (3) x n 3. multiply this value by the number, n, of modular parts connected bootstrapping - signal degradation at low frequency c6, c8 1000 f supply voltage bypass - - c7, c9 0.1 f supply voltage bypass - danger of oscillation master undefined slave -v s +3v -v s +1v -v s d98au821 note: if in the application the speakers are connected via long wires, it is a good rule to add, between the output and gnd, a boucherot cell in order to avoid dangerous spurious oscillations if the speakers terminal are shorted. the suggested boucherot resistor is 3.9 ? /2w and the capacitor is 1 f.
tda7293 applications information doc id 6744 rev 8 11/21 4.2 high efficiency constraints of implementing high power solutions are the power dissipation and the size of the power supply. these are both due to the low efficiency of conventional ab class amplifier approaches. the circuit below in figure 8 is a high efficiency amplifier which can be adopted for both hi-fi and car-radio applications. the tda7293 is a monolithic mos power amplifier which can be operated with a 100-v supply (120 v with no signal applied) while delivering output currents up to 6.5 a. this allows the use of this device as a very high-power amplifier (up to 180 w peak power with thd = 10% and r l = 4 ? ); the only drawback is the power dissipation, hardly manageable in the above power range. the typical junction-to-case thermal resistance of the tda7293 is 1 c/w (max = 1.5 c/w). in worst case conditions, to avoid the chip temperature exceeding 150 c the thermal resistance of the heatsink must be 0.038 c/w (at a maximum ambient temperature of 50 c). as the above value is pratically unreachable , a high efficiency system is needed in those cases where the continuous average output power is higher than 50 to 60 w. the tda7293 was designed to work also in a higher efficiency way. for this reason there are four power supply pins: two intended for the signal part and two for the power part. t1 and t2 are two power transistors that only operate when the output power reaches a certain threshold (for example, 20 w). if the output power increases, these transistors are switched on during the portion of the signal where more output voltage swing is needed, thus "bootstrapping" the power supply pins (13 and 15). the current generators formed by t4, t7, zener diodes z1, z2 and resistors r7, r8 define the minimum drop across the power mos transistors of the tda7293. l1, l2, l3 and the snubbers c9, r1 and c10, r2 stabilize the loops formed by the "bootstrap" circuits and the output stage of the tda7293. by considering again a maximum average output power (music signal) of 20 w, in case of the high efficiency application, the thermal resistance value needed from the heatsink is 2.2 c/w (with v s = 50 v and r l = 8 ? ). all components (tda7293 and power transistors t1 and t2) can be placed on a 1.5 c/w heatsink, with the power darlingtons electrically insulated from the heatsink. since the total power dissipation is less than that of a usual class ab amplifier, additional cost savings can be obtained while optimizing the power supply, even with a large heatsink. 4.3 bridge application another application suggestion is the bridge configuration, where two tda7293 are used. in this application, the value of the load must not be lower than 8 ? for dissipation and current capability reasons. a suitable field of application includes hi-fi/ tv subwoofer realizations. the main advantages offered by this solution are: z high power performance with limited supply voltage level. z considerably higher output power even with high load values, such as 16 ? . with r l = 8 ? and v s = 25 v, the maximum output power obtainable is 150 w, whilst with r l = 16 ? and v s = 40 v, the maximum pout is 200 w.
applications information tda7293 12/21 doc id 6744 rev 8 4.4 modular application (ref. figure 12) the modular application is where several devices operate in parallel. the modular application allows very high power be delivered to very low-impedance loads. in this type of application one device ac ts as a master and the others as slaves. the slave power stages are driven by the master device and work in parallel together while the input and the gain stages of the slave devices are disabled. the figure below shows the connections required to configure two devices to work together. z the master chip connections are the same as the normal single ones. z the outputs can be connected together without the need of any ballast resistor . z the slave sgnd pin must be tied to the negative supply. z the slave standby and mute pins must be connected to the master standby and mute pins. z the bootstrap lines must be connected together and the bootstrap capacitor must be increased: for n devices the bootstrap capacitor must be 22 f times n. z the slave in pin must be connected to the negative supply. 4.5 bootstrap capacitor for compatibility purpose with the previous devices of the fa mily, the bootstrap capacitor can be connected either between the bootstrap pin (6) and the output pin (14) or between the bootstrap pin (6) and the bootstrap loader pin (12). when the bootstrap is connected between pins 6 and 14 the maximum supply voltage in the presence of an output signal is limited to 100 v, due the bootstrap capacitor overvoltage. when the bootstrap is connected between pins 6 and 12 the maximum supply voltage extends to the full voltage that the technology can stand, in this case 120 v. this is accomplished by the clamp introduced at the bootstrap loader pin (12). this pin follows the output voltage up to 100 v and remains clamped at 100 v for higher output voltages. this feature lets the output voltage swing up to a gate-source voltage from the positive supply (v s -3 to 6 v).
tda7293 applications information doc id 6744 rev 8 13/21 figure 8. high-efficiency applications circuit figure 9. pcb and component layout of fig. 8 tda7293 3 1 4 13 7 8 15 2 14 6 10 r3 680 c11 22 f l3 5 h r18 270 r16 13k c15 22 f 9 r12 13k c13 10 f r13 20k c12 330nf r15 10k c14 10 f r14 30k d5 1n4148 play st-by r17 270 l1 1 h t1 bdx53a t3 bc394 d3 1n4148 r4 270 r5 270 t4 bc393 t5 bc393 r6 20k r7 3.3k c16 1.8nf r8 3.3k c17 1.8nf z2 3.9v z1 3.9v l2 1 h r19 270 d4 1n4148 d2 byw98100 r1 2 r2 2 c9 330nf c10 330nf t2 bdx54a t6 bc393 t7 bc394 t8 bc394 r9 270 r10 270 r11 20k out in c7 100nf c5 1000 f 35v c8 100nf c6 1000 f 35v c1 1000 f 63v c2 1000 f 63v c3 100nf c4 100nf +50v +25v d1 byw98100 gnd -25v -50v d97au807c 12 d6 1n4001 r20 20k r21 20k d7 1n4001 r22 10k r23 10k p o t
applications information tda7293 14/21 doc id 6744 rev 8 figure 10. pcb - solder side of the fig 9 figure 11. modular application circuit in- 2 r2 680 ? c2 22 f c1 470nf in+ r1 22k 3 r3 22k - + mute stby 4 10 9 sgnd mute stby r4 22k thermal shutdown s/c protection r5 10k c3 10 f c4 10 f 1 stby-gnd c5 47 f 713 14 6 15 8 -vs -pwvs bootstrap out +pwvs +vs c9 100nf c8 1000 f -vs d97au808d +vs c7 100nf c6 1000 f buffer driver 11 boot loader 12 in- 2 in+ 3 - + mute stby 4 10 9 sgnd mute thermal shutdown s/c protection 1 stby-gnd 713 14 6 15 8 -vs -pwvs bootstrap out +pwvs +vs c9 100nf c8 1000 f -vs +vs c7 100nf c6 1000 f buffer driver 11 boot loader 12 5 clip det 5 master slave c10 100nf r7 2 ? vmute vstby stby
tda7293 applications information doc id 6744 rev 8 15/21 figure 12. modular application pcb and component layout (component side) figure 13. modular application pcb and component layout (solder side)
applications information tda7293 16/21 doc id 6744 rev 8 figure 14. distortion vs output power figure 15. distortion vs output power figure 16. distortion vs frequency figure 17. modular application derating rload vs voltage supply (ref. fig. 12) figure 18. modular application pd vs voltage supply (ref. fig. 12) figure 19. output power vs. supply voltage
tda7293 package mechanical data doc id 6744 rev 8 17/21 5 package mechanical data the tda7293 comes with a choice of two 15-pin packages, multiwatt15v and multiwatt15h. the package sizes and outline drawings are given below. 5.1 vertically-mounted package figure 20. multiwatt15v package outline and mechanical data 0016036 j dim. mm inch min. typ. max. min. typ. max. a5 0.197 b 2.65 0.104 c 1.6 0.063 d 1 0.039 e 0.49 0.55 0.019 0.022 f 0.66 0.75 0.026 0.030 g 1.02 1.27 1.52 0.040 0.050 0.060 g1 17.53 17.78 18.03 0.690 0.700 0.710 h1 19.6 0.772 h2 20.2 0.795 l 21.9 22.2 22.5 0.862 0.874 0.886 l1 21.7 22.1 22.5 0.854 0.87 0.886 l2 17.65 18.1 0.695 0.713 l3 17.25 17.5 17.75 0.679 0.689 0.699 l4 10.3 10.7 10.9 0.406 0.421 0.429 l7 2.65 2.9 0.104 0.114 m 4.25 4.55 4.85 0.167 0.179 0.191 m1 4.73 5.08 5.43 0.186 0.200 0.214 s 1.9 2.6 0.075 0.102 s1 1.9 2.6 0.075 0.102 dia1 3.65 3.85 0.144 0.152 multiwatt15 (vertical)
package mechanical data tda7293 18/21 doc id 6744 rev 8 5.2 horizontally-mounted package figure 21. multiwatt15h outline
tda7293 package mechanical data doc id 6744 rev 8 19/21 in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark. table 6. multiwatt15h dimensions ref dimension in mm dimension in inch notes min typ max min typ max a - - 5.00 - - 0.197 - b - - 2.65 - - 0.104 - c - - 1.60 - - 0.063 - e 0.49 - 0.55 0.019 - 0.022 - f 0.66 - 0.75 0.026 - 0.030 - g 1.02 1.27 1.52 0.040 0.050 0.060 - g1 17.53 17.78 18.03 0.690 0.700 0.710 - h1 19.60 - 20.20 0.772 - 0.795 - h2 19.60 - 20.20 0.772 - 0.795 - l1 17.80 18.00 18.20 0.701 0.709 0.717 - l2 2.30 2.50 2.80 0.091 0.098 0.110 - l3 17.25 17.50 17.75 0.679 0.689 0.699 - l4 10.30 10.70 10.90 0.406 0.421 0.429 - l5 2.70 3.00 3.30 0.106 0.118 0.130 - l7 2.65 - 2.90 0.104 - 0.114 - n ------- p ------- r - 1.50 - - 0.059 - - r1 ------- s 1.90 - 2.60 0.075 - 0.102 - s1 1.90 - 2.60 0.075 - 0.102 - v ------- diam.1 3.65 - 3.85 0.144 - 0.152 -
revision history tda7293 20/21 doc id 6744 rev 8 6 revision history table 7. document revision history date revision changes jan-2004 7 first issue in edocs aug-2004 7.1 stylesheet update. no content change 24-sep-2010 8 updated package dimensions for multiwatt15h in table 6 on page 19 updated presentation throughout document.
tda7293 doc id 6744 rev 8 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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